Low-temperature electron dephasing time in AuPd revisited

Low temperature electron dephasing time in AuPd revisited

Ever since the first discoveries of the quantum-interference transport in mesoscopic systems, the electron dephasing times, τφ, in the concentrated AuPd alloys have been extensively measured. The samples were made from different sources with different compositions, prepared by different deposition methods, and various geometries (1D narrow wires, 2D thin films, and 3D thick films) were studied....

Possible weak temperature dependence of electron dephasing

The first-principle theory of electron dephasing by disorder-induced two state fluctuators is developed. There exist two mechanisms of dephasing. First, dephasing occurs due to direct transitions between the defect levels caused by inelastic electron-defect scattering. The second mechanism is due to violation of the time reversal symmetry caused by time-dependent fluctuations of the scattering ...

Low-temperature dephasing in irradiated metallic wires

Scaling of the low-temperature dephasing rate in Kondo systems.

We present phase coherence time measurements in quasi-one-dimensional Ag wires doped with Fe Kondo impurities of different concentrations n_{s}. Because of the relatively high Kondo temperature T_{K} approximately 4.3 K of this system, we are able to explore a temperature range from above T_{K} down to below 0.01T_{K}. We show that the magnetic contribution to the dephasing rate gamma_{m} per i...

Low-temperature dephasing in disordered conductors: experimental aspects

Abstract. What is the lowest temperature to which one can trace the growth of the dephasing time τφ in low-dimensional conductors? I consider the fundamental limitation, the crossover from weak to strong localization, as well as several experimental reasons for frequently observed saturation of τφ (hot-electron effects, dephasing by external noise). Recent progress in our understanding of the e...